Preparation of surface-tethered polymer layer on inorganic substrates by photoreactive self-assembled monolayer
Identifieur interne : 000053 ( Main/Repository ); précédent : 000052; suivant : 000054Preparation of surface-tethered polymer layer on inorganic substrates by photoreactive self-assembled monolayer
Auteurs : RBID : Pascal:14-0091084Descripteurs français
- Pascal (Inist)
- Traitement surface, Couche autoassemblée, Benzophénone, Oxyde d'indium, Oxyde d'étain, Dépôt centrifugation, Effet rayonnement, Couche mince, Plan expérience, Adhérence, Tribologie, Propriété mécanique, Interface, Polymère, Formation motif, Substrat polymère, Substrat silicium, Substrat indium, Substrat InSnO, Substrat oxyde d'indium et de zinc, 6180, 6860B, 8116R, 4335N.
- Wicri :
- concept : Polymère.
English descriptors
- KwdEn :
Abstract
A self-assembled monolayer (SAM) that has benzophenone (BP) terminal group was prepared on Si and indium-tin oxide (ITO) substrates, on which poly(9-vinyl carbazol) (PVK) was spin-coated and then irradiated with ultraviolet (UV) light. Upon UV irradiation, the BP unit reacted with the PVK backbone, yielding a crosslinked PVK layer that was covalently tethered to the substrate surface. Using this procedure, a patterned thin film of PVK was obtained by irradiating UV light through a photomask and then rinsing in chloroform. When polystylene (PSt) was spin-coated on the BP-SAM, only a thin interfacial layer was tethered by UV irradiation because PSt does not crosslink upon UV irradiation. The BP-SAM improved the adhesion strength between the PVK layer and ITO substrate without reducing the carrier injection from ITO to PVK. The photoreactive BP-SAM appeared to be an effective method to improve the interface between an inorganic electrode and a polymer layer deposited on its surface.
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Pascal:14-0091084Le document en format XML
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<author><name sortKey="Kim, Seong Ho" uniqKey="Kim S">Seong-Ho Kim</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tokyo University of Agriculture and Technology, Department of Organic and Polymer Materials Chemistry. 2-24-16 Naka-cho</s1>
<s2>Koganei, Tokyo 184-8588</s2>
<s3>JPN</s3>
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<sZ>6 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Koganei, Tokyo 184-8588</wicri:noRegion>
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<author><name sortKey="Ohtsuka, Hanae" uniqKey="Ohtsuka H">Hanae Ohtsuka</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tokyo University of Agriculture and Technology, Department of Organic and Polymer Materials Chemistry. 2-24-16 Naka-cho</s1>
<s2>Koganei, Tokyo 184-8588</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Koganei, Tokyo 184-8588</wicri:noRegion>
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<author><name sortKey="Tria, Maria Celeste R" uniqKey="Tria M">Maria Celeste R. Tria</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Houston, Department of Chemistry, 136 Fleming Building</s1>
<s2>Houston, TX 77204-5008</s2>
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<author><name sortKey="Tanaka, Kuniaki" uniqKey="Tanaka K">Kuniaki Tanaka</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tokyo University of Agriculture and Technology, Department of Organic and Polymer Materials Chemistry. 2-24-16 Naka-cho</s1>
<s2>Koganei, Tokyo 184-8588</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
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<sZ>4 aut.</sZ>
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<country>Japon</country>
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<author><name sortKey="Advincula, Rigoberto C" uniqKey="Advincula R">Rigoberto C. Advincula</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Case Western Reserve University, Department of Macromolecular Science and Engineering, 2100 Adelbert Road</s1>
<s2>Cleveland, OH 44106</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Cleveland, OH 44106</wicri:noRegion>
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</author>
<author><name sortKey="Usui, Hiroaki" uniqKey="Usui H">Hiroaki Usui</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tokyo University of Agriculture and Technology, Department of Organic and Polymer Materials Chemistry. 2-24-16 Naka-cho</s1>
<s2>Koganei, Tokyo 184-8588</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Koganei, Tokyo 184-8588</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0091084</idno>
<date when="2014">2014</date>
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<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adhesion</term>
<term>Benzophenone</term>
<term>Experimental design</term>
<term>Indium oxide</term>
<term>Interfaces</term>
<term>Mechanical properties</term>
<term>Patterning</term>
<term>Polymers</term>
<term>Radiation effects</term>
<term>Self-assembled layers</term>
<term>Spin-on coating</term>
<term>Surface treatments</term>
<term>Thin films</term>
<term>Tin oxide</term>
<term>Tribology</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Traitement surface</term>
<term>Couche autoassemblée</term>
<term>Benzophénone</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Dépôt centrifugation</term>
<term>Effet rayonnement</term>
<term>Couche mince</term>
<term>Plan expérience</term>
<term>Adhérence</term>
<term>Tribologie</term>
<term>Propriété mécanique</term>
<term>Interface</term>
<term>Polymère</term>
<term>Formation motif</term>
<term>Substrat polymère</term>
<term>Substrat silicium</term>
<term>Substrat indium</term>
<term>Substrat InSnO</term>
<term>Substrat oxyde d'indium et de zinc</term>
<term>6180</term>
<term>6860B</term>
<term>8116R</term>
<term>4335N</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term>
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<front><div type="abstract" xml:lang="en">A self-assembled monolayer (SAM) that has benzophenone (BP) terminal group was prepared on Si and indium-tin oxide (ITO) substrates, on which poly(9-vinyl carbazol) (PVK) was spin-coated and then irradiated with ultraviolet (UV) light. Upon UV irradiation, the BP unit reacted with the PVK backbone, yielding a crosslinked PVK layer that was covalently tethered to the substrate surface. Using this procedure, a patterned thin film of PVK was obtained by irradiating UV light through a photomask and then rinsing in chloroform. When polystylene (PSt) was spin-coated on the BP-SAM, only a thin interfacial layer was tethered by UV irradiation because PSt does not crosslink upon UV irradiation. The BP-SAM improved the adhesion strength between the PVK layer and ITO substrate without reducing the carrier injection from ITO to PVK. The photoreactive BP-SAM appeared to be an effective method to improve the interface between an inorganic electrode and a polymer layer deposited on its surface.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Preparation of surface-tethered polymer layer on inorganic substrates by photoreactive self-assembled monolayer</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>10th International Conference on Nano-Molecular Electronics (ICNME2012)</s1>
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<fA11 i1="01" i2="1"><s1>KIM (Seong-Ho)</s1>
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<fA11 i1="02" i2="1"><s1>OHTSUKA (Hanae)</s1>
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<fA11 i1="03" i2="1"><s1>TRIA (Maria Celeste R.)</s1>
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<fA11 i1="06" i2="1"><s1>USUI (Hiroaki)</s1>
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<fA12 i1="01" i2="1"><s1>ONODA (Mitsuyoshi)</s1>
<s9>ed.</s9>
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<s9>ed.</s9>
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<s9>ed.</s9>
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<fA14 i1="01"><s1>Tokyo University of Agriculture and Technology, Department of Organic and Polymer Materials Chemistry. 2-24-16 Naka-cho</s1>
<s2>Koganei, Tokyo 184-8588</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA14 i1="02"><s1>University of Houston, Department of Chemistry, 136 Fleming Building</s1>
<s2>Houston, TX 77204-5008</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Case Western Reserve University, Department of Macromolecular Science and Engineering, 2100 Adelbert Road</s1>
<s2>Cleveland, OH 44106</s2>
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<fA15 i1="02"><s1>Tokyo Institute of Technology</s1>
<s3>JPN</s3>
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<fA15 i1="03"><s1>National Institute of Information and Communications Technology</s1>
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<fA18 i1="01" i2="1"><s1>National Institute of Information and Communications Technology (NICT)</s1>
<s2>Tokyo</s2>
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<s9>org-cong.</s9>
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<s2>C</s2>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A self-assembled monolayer (SAM) that has benzophenone (BP) terminal group was prepared on Si and indium-tin oxide (ITO) substrates, on which poly(9-vinyl carbazol) (PVK) was spin-coated and then irradiated with ultraviolet (UV) light. Upon UV irradiation, the BP unit reacted with the PVK backbone, yielding a crosslinked PVK layer that was covalently tethered to the substrate surface. Using this procedure, a patterned thin film of PVK was obtained by irradiating UV light through a photomask and then rinsing in chloroform. When polystylene (PSt) was spin-coated on the BP-SAM, only a thin interfacial layer was tethered by UV irradiation because PSt does not crosslink upon UV irradiation. The BP-SAM improved the adhesion strength between the PVK layer and ITO substrate without reducing the carrier injection from ITO to PVK. The photoreactive BP-SAM appeared to be an effective method to improve the interface between an inorganic electrode and a polymer layer deposited on its surface.</s0>
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<fC02 i1="03" i2="3"><s0>001B80A16R</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s2>NK</s2>
<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="05" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
</fC03>
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<s5>12</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>29</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Patterning</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Substrat polymère</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Substrat silicium</s0>
<s4>INC</s4>
<s5>47</s5>
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<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Substrat InSnO</s0>
<s4>INC</s4>
<s5>49</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>Substrat oxyde d'indium et de zinc</s0>
<s4>INC</s4>
<s5>50</s5>
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<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>8116R</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>4335N</s0>
<s4>INC</s4>
<s5>74</s5>
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<fN21><s1>125</s1>
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<fN44 i1="01"><s1>OTO</s1>
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